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2SK2645-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Outline Drawings
TO-220F
FAP-2S Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 600 9 32 35 9 71.9 50 +150 -55 to +150 Unit V A A V A mJ W C C < *2 Tch=150C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=1.63mH, Vcc=60V
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=600V VGS=0V VGS=35V VDS=0V ID=4.5A VGS=10V ID=4.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=9A VGS=10V RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C 9 1.0 550 7.0 1.5
Min.
600 3.5 Tch=25C Tch=125C
Typ.
4.0 10 0.2 10 1.0 5.0 900 150 70 25 70 60 35
Max.
4.5 500 1.0 100 1.2 1400 230 110 40 110 90 60
Units
V V A mA nA S pF
2.5
ns
A V ns C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
2.5 62.5
Units
C/W C/W
1
2SK2645-01MR
Characteristics
Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):D=0.01,Tc=25C
70
60
10
1
t=0.01 s DC 1s 10s
50
PD [W]
40
ID [A]
10
0
100s 1ms
30
20
10ms 10
-1
t D= t T
100ms
10
T
0
0
50
100
150
10
-2
10
0
10
1
10
2
10
3
Tc [ C]
o
VDS [V]
Typical output characteristics
ID=f(VDS):80s Pulse test,Tch=25C
20 VGS=20V 10V 15 8V
Typical transfer characteristic
ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C
10
1
ID [A]
ID [A]
10 7V
10
0
5
6.5V
10
6V 5.5V 5V 0 5 10 15 20 25 30 35
-1
0
10
-2
0
1
2
3
4
5
6
7
8
9
10
VDS [V]
VGS [V]
Typical forward transconductance
gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C
Typical drain-source on-state resistance
RDS(on)=f(ID):80s Pulse test, Tch=25C
9 VGS= 5V 5.5V 6V 8 7 6.5V 7V
10
1
6
RDS(on) [ ]
gfs [s]
5 4 3 2 1 0 8V 10V 20V
10
0
10
-1
10
-1
10
0
10
1
0
5
10
15
20
ID [A]
ID [A]
2
2SK2645-01MR
FUJI POWER MOSFET
Drain-source on-state resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V
4.0 3.5 5.0 3.0 6.0
Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS
max.
RDS(on) [ ]
VGS(th) [V]
2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150
o
4.0
typ. min.
max.
3.0
typ.
2.0
1.0
0.0
-50
0
50
100
o
150
Tch [ C]
Tch [ C]
Typical gate charge characteristic
VGS=f(Qg):ID=9A,Tch=25C
500 Vcc=480V 450 400 350 300V 45 40 50 10n
Typical capacitances C=f(VDS):VGS=0V,f=1MHz
VDS [V]
300 250 200 150 100 50 0 120V
25 20
C [F]
0V 12 c= V Vc 300 V 0 48
35 30
1n
Ciss
VGS [V]
Coss
100p
15 10 5 0 140 10p 10
-2 -1 0 1
Crss
0
20
40
60
80
100
120
10
10
10
10
2
Qg [nC]
VDS [V]
Forward characteristic of reverse of diode
IF=f(VSD):80s Pulse test,VGS=0V
100
Avalanche energy derating
Eas=f(starting Tch):Vcc=60V,IAV=9A
10
1
80
Tch=25 C typ.
60
o
IF [A]
10
0
Eas [mJ]
40
10
-1
20
10
-2
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
50
o
100
150
VSD [V]
Starting Tch [ C]
3
2SK2645-01MR
Transient thermal impedande Zthch=f(t) parameter:D=t/T
FUJI POWER MOSFET
10
1
D=0.5 10
0
Zthch-c [K/W]
0.2 0.1 0.05 10 0.02
-1
t D= t T
0.01 0 10 -5 10
-2 -4 -3 -2 -1 0
T
10
10
10
10
10
10
1
t [s]
4

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